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IGBT单管
Part Number Download Status Product Grade Diode Type

VCES

(V)

Ic@Tc=100℃

(A)

Ic@Tc=25℃

(A)

Vcesat

(V)

Switching Frequency

(KHZ)

Eon

(mJ)

Eoff

(mJ)

Short Current Withstand Time

(us)

Type Package
CGWT40N120F2KAE

Active
industrial
silicon
1200
40
80
1.7
20~45
3
1.4
5
FST2.0
TO-247
CGB30N65F2KAQ

Ready
industrial
silicon
650
30
60
1.65
20~45
0.75
0.36
7
FST2.0
TO-263
CGB80N65F2SAN

Active
industrial
-
650
80
100
1.55
8~20
1.19
1.97
-
FST2.0
TO-263FC
CGPA30N65F2KAQ

Ready
industrial
silicon
650
30
60
1.65
20~45
0.78
0.35
7
FST2.0
TO-220FA
CGPT40N65F2KAD

Active
industrial
silicon
650
40
80
1.7
20~45
1.23
0.34
5
FST2.0
TO-3P
CGR100N120F2KAD

Active
industrial
silicon
1200
100
160
1.55
20~45
8.14
4.75
5
FST2.0
TO-247plus
CGR140N120F3KAD

Active
industrial
silicon
1200
140
170
1.6
20~45
5.5
13.6
-
FST3.0
TO-247plus
CGR75N120F2KAD

Active
industrial
silicon
1200
75
120
1.65
20~45
6
2.6
10
FST2.0
TO-247plus
CGU06N65F2SAA

Active
industrial
silicon
650
6
12
1.8
8~20
0.052
0.062
5
FST2.0
TO-252
CGWT30N65F2KAD

Active
industrial
silicon
650
30
60
1.7
20~45
0.82
0.36
7
FST2.0
TO-247